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In the present research, molecular beam epitaxy was employed to produce 1 sample of 4H-SiC and 2 samples of 6H-SiC. The 4H- SiC and 6H-SiC were annealed at 1400?aC at a base pressure of 10-5 torr. Atomic Force Microscopy measured the topography and electrical characteristics of the various SiC sample surfaces with sub nanometer scale resolution. Five regions on each sample were chosen for AFM analysis as well as production of voltage curves for the respective areas. Regions on the AFM images indicated two distinct types of carbon features. Circular carbon features on the areas on the 4H and 6H were observed and the voltage curves of the respected regions proved the areas to exhibit rectifying contact as well as practical ?§non??-linear contact...
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