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Essay Details:
Essay text:
Cell transistor with W gate
technology exhibits a sufficient saturation current(bP) of
-40~1A with threshold voltage (Vbat) of 0.9V and
satisfactory ring oscillator delay characteristics of - 5Ops.
INTRODUCTION
The first principle in DRAM integration would be
miniaturization of cell in the viewpoint of cost reduction. In
this study, we have integrated 0.08pm2-sized 8F2 stack
DRAM cell. It is believed that this cell is smallest 8F2 cell
that has been integrated ever. We have employed ArF
patteming to get 100nm-cell resolution. Automatic OPC
and manual OPC is applied to get expected CD for
corelperi Tr with 0...
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